^e-ml-donauctoi lpioauati, una. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon pnp darlington power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 2SB1492 description ? high dc current gain- : hfe= 5000(min)@lc= -5a ? low-collector saturation voltage- : vce(sat)= -2.5v(max.)@lc= -5a ? complement to type 2sd2254 applications ? designed for power amplifier applications. ? optimum for 60w hifi output applications. absolute maximum ratings(ta=25'c) symbol vcbo vgeo vebo ic icm pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak collector power dissipation @ tc=25'c collector power dissipation @ ta=25'c junction temperature storage temperature range value -130 -110 -5 -6 -10 70 3.5 150 -55-150 unit v v v a a w c ?c 1 2 3 pin 1.base 2. collector 3.&1itter to-3pl package dim a b c d e f g h j k n p q r u w mm win 25.50 19.80 4.50 0.90 2.80 2.40 10.80 3.10 0.50 20.00 3.90 2.40 3.10 1.90 3.90 2.90 max 26.50 20.20 5.50 1.10 3.20 2.60 11.00 3.30 0.70 21.00 4.10 2.60 330 2.10 4.10 3.10 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon pnp darlington power transistor 2SB1492 electrical characteristics tc=25'c unless otherwise specified symbol v(br)ceo vce(sat) vse(sat) icbo iceo iebo hpe-1 hpe-2 fi parameter collector-emitter breakdown voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current collector cutoff current emitter cutoff current dc current gain dc current gain current-gain ? bandwidth product conditions lc= -30ma; ib= 0 lc= -5a; ib= -5ma lc= -5a; !b= -5ma vcb=-130v;ie=0 vce=-110v;ib=0 veb= -5v; lc= 0 lc=-1a;vce=-5v lc= -5a; vce= -5v lc=-0.5a; vce=-10v min -110 2000 5000 typ. 20 max -2.5 -3.0 -100 -100 -100 30000 unit v v v ua ua ua mhz switching times ton *stg tf turn-on time storage time fall time lc= -5a; lai= -is2= -5ma, vcc= -50v, 0.9 2.5 1.7 u s u s u s hfe.2 classifications q 5000-15000 p 8000-30000
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